Ultra-Low On-Resistance 1200V/7mΩ SiC MOSFET Device Product Launched by NEXIC
Recently, Chinese semiconductor company Beijing NEXIC Technology Co., Ltd. has launched a state-of-art 1200V SiC MOSFET device product (N2M120007PP0) for renewable energy applications, achieving an industry-leading ultra-low on-resistance of 7mΩ. Based on an automotive-grade manufacturing platform, the new product adopts advanced device design and is compatible with 18V gate drive voltage. The new product aims at the applications requiring high voltage, large current, and low loss, such as the traction inverters in xEVs, contributing to the evolution of the renewable energy field.
The new 1200V/7mΩ product will be delivered in TO-247-Plus package, with Kelvin-source connection and a low thermal resistance. These significantly reduce the switching oscillation and loss, and improve the thermal performance.
The new product achieves a peak operation current of over 300A. It has a positive temperature coefficient, which can facilitate users to achieve high power design by paralleling multiple devices. Meanwhile, the device has a superior blocking capability with an extremely low reverse leakage current (<1μA@1200V).
Static characteristics of NEXIC’s device N2M120007PP0
The new product owns good dynamic switching characteristics under different conditions. It has passed a series of reliability validations, including HTRB, pHTGB, nHTGB, H3TRB and so on.
In addition to TO-247-Plus, NEXIC’s 1200V/7mΩ SiC MOSFET can be packaged in different types, such as customized power modules, which is convenient for various applications.
NEXIC focuses on technology innovation and product development of SiC power devices and power modules. It is committed to become a domestic and worldwide revolutionary leader in the power semiconductor field. NEXIC offers highly customized service from the development of devices and modules to application systems, which can help customers in various fields quickly establish their differentiated competitive advantages.
NEXIC has completed the mass production of SiC devices and modules on 650V, 1200V, and 1700V voltage platforms. The 1200V SiC MOSFET products cover on-resistance specifications from 80mΩ, 40mΩ, and 21mΩ to 7mΩ, and the 1200V/80mΩ SiC MOSFET product has passed the AEC-Q101 automotive-grade reliability qualification. The power module products are benchmarked with EasyPACK, 62mm, EconoDUAL, and other types of packages.
Media Contact
Company Name: Beijing NEXIC Technology Co., Ltd.
Contact Person: Pedro Wu
Email: Send Email
Phone: (86)755-33246218
Country: China
Website: www.nexic.cn
